Transient characterization of the electroforming process in TiO2 based resistive switching devices
Abstract
The transient electroforming process of TiO2-based resistive switching devices is investigated using a pulsed voltage method, and the electroforming time is found to vary from 10−8 s to 10−1 s as function of pulse magnitude (3–8 V) and ambient temperature (25–100 °C). Pulsed experiments and thermal simulations reveal that Joule self-heating has a significant effect on the electroforming dynamics, specially for electroforming voltages above 5.5 V where there is little dependence on ambient temperature and the electroforming time (10–100 ns) is much shorter than the device thermal time constant (≈2 μs).
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 14, 2013
- Source ID
- 10.1063/1.4776693
Entities
People
- Abhishek A. Sharma
- James A. Bain
- Marek Skowronski
- Mohammad Noman
- Paul A. Salvador
- Yi Meng Lu
Organizations
- Carnegie Mellon University
- Defense Advanced Research Projects Agency