Spin lifetime measurements in GaAsBi thin films
Abstract
Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence of gTs provides evidence for a thermally activated effect, which is attributed to hole localization at single Bi or Bi cluster sites below 40 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 14, 2013
- Source ID
- 10.1063/1.4781415
Entities
People
- Brennan Pursley
- G. Vardar
- M. Luengo-kovac
- R. S. Goldman
- V. Sih
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Office of Naval Research
- University of Michigan