Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays
Abstract
The cross-sectional sizes of the regularly patterned GaN nanorods (NRs) and InGaN/GaN quantum-well (QW) NRs of different heights and different hexagon orientations, which are grown on the patterned templates of different hole diameters, pitches, and crystal orientations, are compared. It is found that the cross-sectional size of the GaN NR, which is formed with the pulsed growth mode, is mainly controlled by the patterned hole diameter, and the thickness of the sidewall QW structure is mainly determined by the NR height. The cross-sectional size variation of GaN NR is interpreted by the quasi-three-dimensional nature of atom supply amount for precipitating a two-dimensional disk-shaped NR segment. The variation of the sidewall QW structure is explained by the condition of constituent atom supply in the gap volume between the neighboring NRs. Also, we compare the cathodoluminescence emission wavelengths among those samples of different growth conditions. Generally speaking, the QW NR with a smaller height, a larger cross-sectional size, or a larger pitch has a longer emission wavelength.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 07, 2013
- Source ID
- 10.1063/1.4790710
Entities
People
- Charng-gan Tu
- Che-hao Liao
- Chen Yang
- Chia-ying Su
- Chieh Hsieh
- Chih-Yen Chen
- Hao-tsung Chen
- Horng-shyang Chen
- Ta-cheng Hsu
- Wen-ming Chang
- Yean-woei Kiang
- Yu-feng Yao
Organizations
- Air Force Office of Scientific Research
- Epistar
- National Science and Technology Council
- National Taiwan University