Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
Abstract
Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amount of strain and number of pits in localized areas. Pit densities as high as 1010 cm−2 were observed in areas where the tensile strain reached ∼0.4%, while unstrained areas of the film showed step flow growth. These nano-pits occurred as a strain relaxation mechanism and were not related to intrinsic defects, such as threading dislocations or inversion domains.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 11, 2013
- Source ID
- 10.1063/1.4792694
Entities
People
- Anthony D. Rice
- I. Bryan
- Junfei Xie
- L. Hussey
- M. Bobea
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Z. Bryan
- Zlatko Sitar
Organizations
- Defense Advanced Research Projects Agency
- North Carolina State University