Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
Abstract
Molecular beam epitaxial growth of strain-balanced InAs/InAs1−xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 18, 2013
- Source ID
- 10.1063/1.4793231
Entities
People
- David J Smith
- Ding Ding
- Elizabeth H. Steenbergen
- Hua Li
- Jin Fan
- Jing Lu
- Oray O. Cellek
- S. Liu
- S. R. Johnson
- Xiao-Meng Shen
- Yong-hang Zhang
- Zhao-yu He
- Zhi-yuan Lin
Organizations
- Arizona State University
- Army Research Office