Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Abstract
Interface charges at atomic layer deposited Al2O3/III-nitride interfaces were investigated for III-nitride layers of different polarity. A large positive sheet charge density is induced at the Al2O3/III-nitride interface on all the orientations of GaN and Ga-polar AlGaN, and this sheet charge can be significantly altered using post-metallization anneals. It is proposed that the charges are caused by interfacial defects that can be passivated and neutralized through a H2 based anneal. Tailoring of the interface charge density described here can be used to improve critical device characteristics such as gate leakage and electron transport, and for lateral electrostatic engineering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 18, 2013
- Source ID
- 10.1063/1.4793483
Entities
People
- Digbijoy Neelim Nath
- Michele Esposto
- Pil Sung Park
- Siddharth Rajan
- Sriram Krishnamoorthy
- Ting-hsiang Hung
Organizations
- Office of Naval Research
- Ohio State University