Interference and memory capacity effects in memristive systems
Abstract
Short-term memory implies the existence of a capacity limit beyond which memory cannot be securely formed and retained. The underlying mechanisms are believed to be two primary factors: decay and interference. Here, we demonstrate through both simulation and experiment that the memory capacity effect can be implemented in a parallel memristor circuit, where decay and interference are achieved by the inherent ion diffusion in the device and the competition for current supply in the circuit, respectively. This study suggests it is possible to emulate high-level biological behaviors with memristor circuits and will stimulate continued studies on memristor-based neuromorphic circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 25, 2013
- Source ID
- 10.1063/1.4794024
Entities
People
- Chao Du
- John Hermiz
- Ting Chang
- Wei Lu
Organizations
- Defense Advanced Research Projects Agency
- University of Michigan