The effect of ground and first excited state transitions on transistor laser relative intensity noise
Abstract
We report the results of relative intensity noise (RIN) measurement on the ground and first excited state transitions of a single quantum-well (QW) transistor laser (TL). Because of higher differential gain and faster recombination lifetime on the first excited state transition, a lower laser RIN is measured as compared with ground state laser operation. The minority carrier density in the base of QWTL extracted from the laser RIN shows a carrier density of 2.6–3.5 × 1016 cm−3, a more than 40× reduction from that of a conventional diode laser.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 25, 2013
- Source ID
- 10.1063/1.4794025
Entities
People
- Furui Tan
- MengKe Feng
- N. Holonyak Jr.
- Wenbin Xu
- Xinyi Huang
Organizations
- Army Research Office
- University of Illinois Urbana–Champaign