Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

Abstract

The experimental determination of valence band offsets (VBOs) at interfaces in complex-oxide heterostructures using conventional soft x-ray photoelectron spectroscopy (SXPS, hν ≤ 1500 eV) and reference core-level binding energies can present challenges because of surface charging when photoelectrons are emitted and insufficient probing depth to clearly resolve the interfaces. In this paper, we compare VBOs measured with SXPS and its multi-keV hard x-ray analogue (HXPS, hν > 2000 eV). We demonstrate that the use of HXPS allows one to minimize charging effects and to probe more deeply buried interfaces in heterostructures such as SrTiO3/LaNiO3 and SrTiO3/GdTiO3. The VBO values obtained by HXPS for these interfaces are furthermore found to be close to those determined by first-principles calculations.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 08, 2013
Source ID
10.1063/1.4795612

Entities

People

  • A. A. Greer
  • A. Bostwick
  • A. Gloskovskii
  • A. Janotti
  • A. Keqi
  • A. M. Kaiser
  • A. Rattanachata
  • A. X. Gray
  • A. Y. Saw
  • C. G. Van De Walle
  • C. M. Schneider
  • C. S. Conlon
  • C. S. Fadley
  • D. Eiteneer
  • G. K. Palsson
  • Galen Conti
  • J. Son
  • K. Kobayashi
  • L. Bjaalie
  • M. Kobata
  • Pouya Moetakef
  • S. Nemšák
  • S. Stemmer
  • S. Ueda
  • W. C. Stolte
  • W. Drube

Organizations

  • Advanced Light Source
  • Army Research Office
  • DESY
  • Lawrence Berkeley National Laboratory
  • National Science Foundation
  • SLAC National Accelerator Laboratory
  • United States Department of Energy
  • University of California

Tags

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene