Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications
Abstract
Metamorphic heterostructures containing bulk InAs1−xSbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 μm thick InAsSb0.44 layer with an absorption edge above 9 μm exhibited an in-plane residual strain of about 0.08%. InAs1−xSbx structures with x = 0.2 and x = 0.44 operated as light emitting diodes at 80 K demonstrated output powers of 90 μW and 8 μW at 5 μm and 8 μm, respectively.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 18, 2013
- Source ID
- 10.1063/1.4796181
Entities
People
- David Westerfeld
- Ding Wang
- Dmitry Donetsky
- G. Kipshidze
- Gregory Belenky
- L. Shterengas
- Stefan P. Svensson
- Wendy L. Sarney
- Youxi Lin
Organizations
- Army Research Office
- Stony Brook University
- United States Army Research Laboratory