Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
Abstract
By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V−1 s−1 which is considerably smaller than 306.5 cm2 V−1 s−1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 25, 2013
- Source ID
- 10.1063/1.4799172
Entities
People
- Daniel Rhodes
- L. Balicas
- M. Terrones
- N. R. Pradhan
- Pulickel Ajayan
- Qing Zhang
- Saikat Talapatra
Organizations
- Army Research Office
- Florida State University
- National Science Foundation
- Pennsylvania State University
- Rice University