Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
Abstract
We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 08, 2013
- Source ID
- 10.1063/1.4801764
Entities
People
- Daniel Wasserman
- Daniel Zuo
- Pengfei Qiao
- Shun Lien Chuang
Organizations
- Army Research Office
- University of Illinois Urbana–Champaign