Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors
Abstract
We have investigated the contact-doping effect on high performance n-channel C60 organic field-effect transistors (OFETs) using the air-stable rhodocene dimer as an n-type dopant. The average charge mobility improved from a value of 0.48 cm2/(Vs) in a reference device to 1.65 cm2/(Vs) for contact-doped devices with a channel length of 25 μm. The operational stability of contact-doped OFETs under continuous stress bias was found similar to the reference devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 15, 2013
- Source ID
- 10.1063/1.4802237
Entities
People
- Asha Sharma
- Bernard Kippelen
- Canek Fuentes-Hernandez
- Sanjeev Singh
- Seth Marder
- Stephen Barlow
- Swagat K. Mohapatra
Organizations
- Georgia Tech
- Office of Naval Research