Electronic structure of boron doped diamond: An x-ray spectroscopic study
Abstract
The valence and conduction band electronic structure of boron-doped diamond has been measured using soft x-ray emission and absorption spectroscopy. The experimental results reveal p-type doping in the diamond film through the appearance of states in the band-gap. Structure distortion was observed around the doping center, while the long range order of the diamond structure remains. A chemically shifted C 1s level explains why one of the absorption features seems to appear below the valence band maximum. An excitonic feature was observed in the boron-doped diamond, similar to that observed in pure diamond, indicating that the exciton binding energy remains the same upon B-doping.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 22, 2013
- Source ID
- 10.1063/1.4802814
Entities
People
- A. De Battisti
- J.-h. Guo
- K. E. Smith
- M. Mattesini
- P.-a. Glans
- R. Ahuja
- S. Ferro
- T. Learmonth
Organizations
- Advanced Light Source
- Army Research Office
- Boston University
- Complutense University of Madrid
- United States Department of Energy
- University of Ferrara
- Uppsala University