Optical power of semiconductor lasers with a low-dimensional active region
Abstract
A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 13, 2014
- Source ID
- 10.1063/1.4861408
Entities
People
- Levon V Asryan
- Zinaida N. Sokolova
Organizations
- Army Research Office
- Ioffe Institute
- Virginia Tech