Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
Abstract
The band-to-band tunneling of monolayer transition metal dichalcogenides nano-junction is investigated using atomistic ab initio quantum transport simulations. From the simulation, it is found that the transition metal vacancy defect in the two-dimensional MX2 (M = Mo,W; X = S,Se) band-to-band tunneling diode can dramatically boost the on-state current up to 10 times while maintaining the device sub-threshold swing. The performance enhancement mechanism is discussed in detail by examining partial density of states of the system. It is found that the transition metal vacancy induces band-gap states, which reduce the effective length of the tunneling transition region.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 13, 2014
- Source ID
- 10.1063/1.4862667
Entities
People
- Jian Gong
- Jinfeng Zhang
- Lin-Wang Wang
- Nuo Xu
- Shu-shen Li
- Xiang-wei Jiang
- Yue Hao
Organizations
- Chinese Academy of Sciences
- Inner Mongolia University
- Lawrence Berkeley National Laboratory
- Office of Naval Research
- Xidian University