Epitaxial growth of VO2 by periodic annealing
Abstract
We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 10, 2014
- Source ID
- 10.1063/1.4864404
Entities
People
- D. A. Muller
- D. G. Schlom
- Hanhee Paik
- J. A. Moyer
- J. A. Mundy
- Jeong Hyo Lee
- Joshua Tashman
- Jürgen Schubert
- P. Schiffer
- Rohan Misra
- T. A. Merz
- T. Spila
Organizations
- Cornell University
- Korea Atomic Energy Research Institute
- Office of Naval Research
- Pennsylvania State University
- University of Illinois Urbana–Champaign