Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures
Abstract
We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V−1 s−1 at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 10, 2014
- Source ID
- 10.1063/1.4864629
Entities
People
- Ananth Dodabalapur
- Bongjun Kim
- Mark Hersam
- Michael L. Geier
- Pradyumna L. Prabhumirashi
- Seonpil Jang
Organizations
- Northwestern University
- Office of Naval Research
- University of Texas at Austin