Effect of the energy barrier in the base of the transistor laser on the recombination lifetime
Abstract
Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the device. A greater ΔEC,B results in lower transistor current gain (β) and higher optical output power, indicating increased carrier confinement and recombination in the base. For a device with ΔEC,B = 41 meV, the measured bias-dependent optical frequency response and subsequent data fitting yield a short recombination lifetime of 30 ps in the base and a small resonance peak of 1.5 dB. A device with ΔEC,B = 82 meV exhibits a longer recombination lifetime of 70 ps and a larger resonance peak of 4 dB.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 24, 2014
- Source ID
- 10.1063/1.4866778
Entities
People
- C. Wang
- J. M. Dallesasse
- MengKe Feng
- N. Holonyak Jr.
- R. Bambery
Organizations
- Army Research Office
- University of Illinois Urbana–Champaign