Analysis of flicker noise in two-dimensional multilayer MoS2 transistors
Abstract
Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide–semiconductor interface of back-gated multilayer MoS2 transistors. We also investigated the mechanism of the LFN and extracted γ exponents from the LFN behavior, 1/fγ; the value of γ was >1 at negative gate bias because of active slow traps. As VG increased, the slow traps were filled and thus γ decreased, stabilizing at ≈0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Δn) model was the dominant origin of the LFN. The multilayer MoS2 structure had better noise immunity than a single-layer case in air.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 24, 2014
- Source ID
- 10.1063/1.4866785
Entities
People
- Costas P Grigoropoulos
- Hongki Kang
- Hyuk-jun Kwon
- Jaewon Jang
- Sunkook Kim
Organizations
- Air Force Office of Scientific Research
- Kyung Hee University
- University of California