Components of strong magnetoresistance in Mn implanted Ge
Abstract
Strong magnetoresistance reaching thousands of percent and non-monotonic field dependent Hall effect were measured in Mn implanted Ge samples in fields up to 60 T and analyzed in the framework of a two carriers model. The measured Hall effect and temperature dependent zero field resistance can be consistently described by parallel conductance along thick p-type Ge substrate with low concentration of highly mobile carriers and along thin Mn doped Ge layer with low mobility carriers. However, the same model is not sufficient to explain experimentally observed suppression of quadratic field dependence of magnetoresistance at low fields and absence of its saturation at high fields. Two additional mechanisms were identified: a strong quasi-linear magnetoresistance of Ge substrate that dominates the low field range and a non-saturating “3/2” power law magnetoresistance of the Mn doped Ge layer dominating the high field range.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 05, 2014
- Source ID
- 10.1063/1.4867623
Entities
People
- A. Gerber
- A. Simons
- Alexey Suslov
- B. Raquet
- G. Impellizzeri
- I. Ya. Korenblit
- L. Ottaviano
- M. Passacantando
- Б. А. Аронзон
Organizations
- Air Force Office of Scientific Research
- National High Magnetic Field Laboratory
- Russian Academy of Sciences
- Tel Aviv University
- University of Catania