Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
Abstract
We develop a super-saturation technique to extend the previously established doping density limit for ultra-high vacuum monolayer doping of silicon with phosphorus. Through an optimized sequence of PH3 dosing and annealing of the silicon surface, we demonstrate a 2D free carrier density of ns = (3.6 ± 0.1) × 1014 cm−2, ∼50% higher than previously reported values. We perform extensive characterization of the dopant layer resistivity, including room temperature depth-dependent in situ four point probe measurements. The dopant layers remain conductive at less than 1 nm from the sample surface and importantly, surpass the semiconductor industry target for ultra-shallow junction scaling of <900 Ω◻−1 at a depth of 7 nm.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 24, 2014
- Source ID
- 10.1063/1.4869111
Entities
People
- C. M. Polley
- Giordano Scappucci
- J. G. Keizer
- M. Y. Simmons
- S. R. Mckibbin
Organizations
- Army Research Office
- University of New South Wales