Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy
Abstract
We report a study of internal photoemission spectroscopy (IPE) applied to a n-type Hg1−xCdxTe/Hg1−yCdyTe heterojunction. An exponential line-shape of the absorption tail in HgCdTe is identified by IPE fittings of the near-threshold quantum yield spectra. The reduction of quantum yield (at higher photon energy) below the fitting value is explained as a result of carrier-phonon scatterings. In addition, the obtained bias independence of the IPE threshold indicates a negligible electron barrier at the heterojunction interface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 31, 2014
- Source ID
- 10.1063/1.4870479
Entities
People
- A G Unil Perera
- Priyalal S. Wijewarnasuriya
- Yan-feng Lao
Organizations
- Army Research Office
- Georgia State University
- United States Army Research Laboratory