Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium
Abstract
Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 14, 2014
- Source ID
- 10.1063/1.4872316
Entities
People
- J. Hader
- Jerome V. Moloney
- Stephan W. Koch
Organizations
- Air Force Office of Scientific Research
- University of Arizona
- University of Marburg