Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures
Abstract
We demonstrate charge modulation of over 1014 cm−2 electrons in a two-dimensional electron gas formed in SrTiO3/GdTiO3 inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO3 cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO3 impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 1014 cm−2.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 05, 2014
- Source ID
- 10.1063/1.4875796
Entities
People
- C. Polchinski
- Clayton Jackson
- M. Boucherit
- M. L. C. Buffon
- Omor Shoron
- S. Stemmer
- Sreejith Kochupurackal Rajan
- T. A. Cain
Organizations
- Office of Naval Research
- Ohio State University
- University of California