Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
Abstract
It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10 nm/50 nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 Ω-μm was obtained after a thermal anneal at 523 K for 2 hr under vacuum, which is comparable to state-of-the-art values.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 02, 2014
- Source ID
- 10.1063/1.4880937
Entities
People
- A. Nath
- Andrew D. Koehler
- C. R. Eddy Jr.
- D. Kurt Gaskill
- Glenn G. Jernigan
- J. K. Hite
- M. V. Rao
- N. Y. Garces
- R. L. Myers-ward
- Silvia C. Hernández
- Virginia D. Wheeler
- Zachary R. Robinson
Organizations
- George Mason University
- Office of Naval Research
- United States Naval Research Laboratory