Electronic transport and conduction mechanism transition in La1∕3Sr2∕3FeO3 thin films
Abstract
We report on the electronic transport properties of epitaxial La1∕3Sr2∕3FeO3 films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190 K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T* and a sign reversal of the Hall coefficient at T*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La1∕3Sr2∕3FeO3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 17, 2014
- Source ID
- 10.1063/1.4883541
Entities
People
- A. L. Krick
- R. C. Devlin
- R. J. Sichel-tissot
- S. J. May
- Y. J. Xie
Organizations
- Drexel University
- Office of Naval Research