Inelastic electron tunneling spectroscopy of local “spin accumulation” devices
Abstract
We investigate the origin of purported “spin accumulation” signals observed in local “three-terminal” (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 09, 2014
- Source ID
- 10.1063/1.4883638
Entities
People
- Holly N. Tinkey
- Ian Appelbaum
- Pengke Li
Organizations
- Office of Naval Research
- University of Maryland