Electrical characteristics of Ni Ohmic contact on n-type GeSn
Abstract
We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 16, 2014
- Source ID
- 10.1063/1.4883748
Entities
People
- C. P. Lee
- H. H. Cheng
- Huanan Li
- L. C. Lee
- L. H. Su
- Y. W. Suen
Organizations
- Air Force Office of Scientific Research
- National Chiao Tung University
- National Chung Hsing University
- National Taiwan University