X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films
Abstract
We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 16, 2014
- Source ID
- 10.1063/1.4884115
Entities
People
- Carlo U Segre
- Jaeyeong Heo
- Roy G. Gordon
- Sang Woon Lee
- Sin Cheng Siah
- Tomohiro Shibata
- Tonio Buonassisi
- Yun Seog Lee
Organizations
- Chonnam National University
- Harvard University
- Illinois Institute of Technology
- Massachusetts Institute of Technology
- Office of Naval Research