Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials
Abstract
A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1–1.5 μs toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on- or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1–0.24 dB.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 07, 2014
- Source ID
- 10.1063/1.4885388
Entities
People
- Brian P. Wagner
- Evan B. Jones
- Matthew R. King
- Michael J. Lee
- Nabil El-Hinnawy
- Pavel Borodulin
- Robert M. Young
- Robert S. Howell
Organizations
- Defense Advanced Research Projects Agency
- Northrop Grumman Electronic Systems