Band structure mapping of bilayer graphene via quasiparticle scattering

Abstract

A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as γ0 = 3.1 eV, γ1 = 0.39 eV, and γ4 = 0.22 eV.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 21, 2014
Source ID
10.1063/1.4890543

Entities

People

  • A. Glen Birdwell
  • Brian J LeRoy
  • Joel I-Jan Wang
  • Kenji Watanabe
  • Matthew Yankowitz
  • Pablo Jarillo-Herrero
  • Su Ying Quek
  • Suchun Li
  • Takashi Taniguchi
  • Yu-An Chen

Organizations

  • Army Research Office
  • Harvard University
  • Massachusetts Institute of Technology
  • National Institute for Materials Science
  • National Research Foundation
  • National Science Foundation
  • National University of Singapore
  • Office of Naval Research
  • United States Army Research Laboratory
  • University of Arizona

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene