A prototype silicon double quantum dot with dispersive microwave readout
Abstract
We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 22, 2014
- Source ID
- 10.1063/1.4890835
Entities
People
- A. R. Schmidt
- C. C. Lo
- E. Henry
- E. Yablonovitch
- Huanan Li
- I. Siddiqi
- J. Bokor
- K. B. Whaley
- L. Greenman
- O. Namaan
- T. Schenkel
- Y.-t. Wang
Organizations
- Defense Advanced Research Projects Agency
- Lawrence Berkeley National Laboratory
- University of California