Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers
Abstract
Single- and few-layered transition metal dichalcogenides, such as MoS2 and WS2, are emerging two-dimensional materials exhibiting numerous and unusual physico-chemical properties that could be advantageous in the fabrication of unprecedented optoelectronic devices. Here we report a novel and alternative route to synthesize triangular monocrystals of MoS2 and MoxW1-xS2 by annealing MoS2 and MoS2/WO3 precursors, respectively, in the presence of sulfur vapor. In particular, the MoxW1-xS2 triangular monolayers show gradual concentration profiles of W and Mo whereby Mo concentrates in the islands’ center and W is more abundant on the outskirts of the triangular monocrystals. These observations were confirmed by atomic force microscopy, and high-resolution transmission electron microscopy, as well as Raman and photoluminescence spectroscopy. The presence of tunable PL signals depending on the MoxW1-xS2 stoichiometries in 2D monocrystals opens up a wide range of applications in electronics and optoelectronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2014
- Source ID
- 10.1063/1.4895469
Entities
People
- Ana Laura Elias
- Chanjing Zhou
- Humberto Terrones
- Kazunori Fujisawa
- Mauricio Terrones
- Michael T. Thee
- Nestor Perea-lopez
- Simin Feng
- Victor Carozo
- Zhong Lin
Organizations
- Army Research Office
- Pennsylvania State University
- Rensselaer Polytechnic Institute