Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
Abstract
We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (≤0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy (Hanis0 ∼ 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter (α∼0.1−0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping (α≤0.03).
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 08, 2014
- Source ID
- 10.1063/1.4895581
Entities
People
- D. C. Ralph
- G. E. Rowlands
- Junbo Park
- O. J. Lee
- R. A. Buhrman
Organizations
- Cornell University
- Office of Naval Research