Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon
Abstract
As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 15, 2014
- Source ID
- 10.1063/1.4895920
Entities
People
- C. J. Chang-hasnain
- K. W. Ng
- Lu Fang
- R Chen
- T.-t. D. Tran
- W. S. Ko
Organizations
- National Science Foundation
- United States Department of Defense
- University of California