Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
Abstract
We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 1014 cm−2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO3 in increasing the pinch off voltage of the MESFET.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 15, 2014
- Source ID
- 10.1063/1.4896275
Entities
People
- Amit Verma
- Debdeep Jena
- Santosh Raghavan
- Susanne Stemmer
Organizations
- Office of Naval Research
- University of California
- University of Notre Dame