The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Abstract
Surface states and their influence on the Fermi level at the surface of GaN and AlN are studied using x-ray photoelectron spectroscopy (XPS). The effect of polarity on surface electronic properties was studied. Accurate modeling of the valence band edge and comparison with XPS data revealed the presence of donor surface states at 1.4 eV and acceptor states at energies >2.7 eV from the valence band in GaN. Al polar AlN showed acceptor states at energies >3.3 eV. Density of acceptor surface states was estimated to be between 1013 and 1014 eV−1 cm−2 in both GaN and AlN. The shift in charge neutrality levels and barrier heights due to polarity and the density of surface states on AlN and GaN were estimated from XPS measurements. Theoretical modeling and comparison with XPS data implied full compensation of spontaneous polarization charge by charged surface states. Barrier height measurements also reveal a dependence on polarity with ϕmetal-polar > ϕnon-polar > ϕnitrogen-polar suggesting that the N-polar surface is the most suitable for Ohmic contacts.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 22, 2014
- Source ID
- 10.1063/1.4896377
Entities
People
- Isaac Bryan
- Lindsay Hussey
- Pramod Reddy
- Ramón Collazo
- Wei Guo
- Zachary Bryan
- Zlatko Sitar
Organizations
- ARPA-E
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency
- National Science Foundation
- North Carolina State University