AlGaN/GaN field effect transistors functionalized with recognition peptides
Abstract
Recognition peptides are used to modify AlGaN/GaN field effect transistors. The recognition sequence, SVSVGMKPSPRP, was compared to other biomolecules and subsequently the device stability was examined. Changes in the electrical characteristic were recorded using current-voltage measurements at a VD of 1 V and VG of −1 V. The recognition sequence coatings yielded an average increase in ID of 96.43% compared to initial values. Exposure to solution removed the peptides from the devices indicating a weak interaction between adsorbate and the semiconductor surfaces. The peptide coatings are suitable for simple device modification for short-term recognition studies.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 29, 2014
- Source ID
- 10.1063/1.4896962
Entities
People
- A. Ivanisevic
- C. Arellano
- I. Bryan
- N. Rohrbaugh
- Ramón Collazo
- Z. Bryan
Organizations
- Air Force Office of Scientific Research
- North Carolina State University