Determination of heterojunction band offsets between CdS bulk and PbS quantum dots using photoelectron spectroscopy
Abstract
Photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔEV) of a CdS/PbS quantum dot (QD) heterojunction for which the PbS QD layer was deposited using solution based layer-by-layer dip coating method on top of RF magnetron sputtered CdS. A value of ΔEV = 1.73 eV was obtained using the Cd 3d and Pb 4f energy levels as references. Given the band gap energies of the CdS and PbS-QD layers, the conduction band offset ΔEC was determined to be 0.71 eV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 29, 2014
- Source ID
- 10.1063/1.4897301
Entities
People
- Hasitha Mahabaduge
- Hyekyoung Choi
- Khagendra P. Bhandari
- Randy J Ellingson
- Sohee Jeong
Organizations
- Air Force Research Laboratory
- Korea University of Science and Technology
- University of Toledo