Flexoelectricity in barium strontium titanate thin film
Abstract
Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba0.7Sr0.3TiO3 thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 06, 2014
- Source ID
- 10.1063/1.4898139
Entities
People
- Fuh-gwo Yuan
- Jon-Paul Maria
- Longlong Shu
- Seol Ryung Kwon
- Wenbin Huang
- Xiaoning Jiang
Organizations
- National Science Foundation
- North Carolina State University
- United States Army Research Laboratory
- Xi'an Jiaotong University