Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Abstract
Material and optical characterizations have been conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 13, 2014
- Source ID
- 10.1063/1.4898597
Entities
People
- Aboozar Mosleh
- Amjad Nazzal
- Baohua Li
- Benjamin R. Conley
- Greg Sun
- Hameed A. Naseem
- Joe Margetis
- John Tolle
- Larry Cousar
- Lucas Domulevicz
- Richard Soref
- Seyed Amir Ghetmiri
- Shui-Qing Yu
- Wei Du
Organizations
- University of Arkansas
- University of Massachusetts Boston
- Wilkes University