Negative differential resistance in GaN tunneling hot electron transistors
Abstract
Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 17, 2014
- Source ID
- 10.1063/1.4900780
Entities
People
- Digbijoy Nath
- Siddharth Rajan
- Zhichao Yang
Organizations
- Office of Naval Research
- Ohio State University