Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Abstract
In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140–220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 27, 2014
- Source ID
- 10.1063/1.4900964
Entities
People
- B. Sensale-rodriguez
- Bowen Song
- H. Xing
- J. Encomendero
- Menglin Zhu
- P. Fay
- Wei Chen
- Wen Li
- Yan Zhao
- Yuanfu Yue
Organizations
- Office of Naval Research
- University of Notre Dame
- University of Utah