Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy
Abstract
The GaAs/AlGaAs material system is believed to have a band offset without remarkable influence from the interface. We report here probing a slightly higher (5–10 meV) valence-band offset at the GaAs-on-Al0.57Ga0.43As interface compared to that of the Al0.57Ga0.43As-on-GaAs interface, by using internal photoemission spectroscopy. This indicates the non-commutativity of band offset for GaAs/AlGaAs, i.e., the dependence on the order of the growth of the layers. This result is consistently confirmed by observations at various experimental conditions including different applied biases and temperatures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 27, 2014
- Source ID
- 10.1063/1.4901040
Entities
People
- A G Unil Perera
- T. M. Wang
- Y. H. Zhang
- Yan-feng Lao
Organizations
- Army Research Office
- Georgia State University
- National Science Foundation
- Shanghai Jiao Tong University