Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties
Abstract
We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 10, 2014
- Source ID
- 10.1063/1.4901719
Entities
People
- Boris Yakshinskiy
- Can Xu
- G. Liu
- Joseph Bloch
- L. C. Feldman
- Leszek Wielunski
- Sarit Dhar
- Torgny Gustafsson
Organizations
- Auburn University
- National Science Foundation
- Rutgers University
- United States Army Research Laboratory