Scaling junctionless multigate field-effect transistors by step-doping
Abstract
Conventional junctionless (JL) multigate field-effect transistors (MuGFETs) use extremely scaled and highly doped fins as channels. Such small fins introduce large parasitic resistance as well as performance fluctuation due to fin width variations. The high channel doping significantly reduces bulk carrier mobility, which reduces on-state current and escalates short channel effect related leakage. In this letter, we present a step-doping scheme for the scaling of JL MuGFETs. By employing a two-step-doping profile, with the high doping side near the gate, higher threshold voltage and better off-state performance can be achieved, along with higher on-state current. This opens a route for threshold voltage design and addresses the design optimization for both on-state current and off-state leakage for JL MuGFETs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2014
- Source ID
- 10.1063/1.4902864
Entities
People
- Xiuling Li
- Yi Song
Organizations
- National Science Foundation
- Office of Naval Research
- University of Illinois Urbana–Champaign