m-plane (101¯) and (202¯1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling
Abstract
The reduced polarization of nonpolar and semipolar orientations of the III-Nitrides is very attractive for optoelectronics applications. Several properties of these orientations have yet to be investigated. In particular, there is no a priori reason for the band offset to be the same for different crystallographical orientations. In the present article, we report on the extraction of the GaN/AlxGa1–xN conduction band offsets through capacitance-voltage profiling for m-plane (101¯0) and (202¯1) orientations. We extracted a ΔEc:ΔEv of 50:50–60:40. We measured a non-zero hetero-interface charge for the (202¯1) orientation which made the extraction of ΔEc less reliable.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 08, 2014
- Source ID
- 10.1063/1.4903180
Entities
People
- Christophe A. Hurni
- Herbert Kroemer
- James S. Speck
- Umesh Mishra
Organizations
- Air Force Office of Scientific Research
- University of California