Scattering in graphene associated with charged out-of-plane impurities
Abstract
A charged impurity outside the plane of a graphene layer contributes to scattering of electrons (and holes) in the graphene. The interaction occurs through two distinct mechanisms associated with the charge: (1) the (screened) Coulomb potential, and (2) the electric field perpendicular to the graphene plane that causes a spatially varying Rashba spin-orbit interaction. Both types of scattering are examined, with the screened potential self-consistently calculated in nonlinear Thomas-Fermi approximation. Different selection rules for the two mechanisms lead to qualitative differences in the differential scattering cross-sections. Using accepted parameters for the Rashba interaction, the latter is found to make only a very small contribution to the scattering associated with a remote charge.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 16, 2014
- Source ID
- 10.1063/1.4904193
Entities
People
- Aditi Goswami
- Darryl L. Smith
- Feilong Liu
- P. Paul Ruden
- Yue Liu
Organizations
- Defense Advanced Research Projects Agency
- Los Alamos National Laboratory
- University of Minnesota