Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
Abstract
We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 08, 2014
- Source ID
- 10.1063/1.4904271
Entities
People
- Binh Huy Le
- Nhung Hong Tran
- Songrui Zhao
- Zetian Mi
Organizations
- Army Research Office
- McGill University
- Natural Sciences and Engineering Research Council